Semiconductor device
US11049765B2 · kind B2 · utility
0Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 2020 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | May 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure of semiconductor device includes a substrate, having a dielectric layer on top. The structure further includes at least two metal elements being adjacent, disposed in the dielectric layer, wherein an air gap is existing between the two metal elements. A porous dielectric layer is disposed over the substrate, sealing the air gap. An inter-layer dielectric layer disposed on the porous dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.