Methods of forming microelectronic devices, and related microelectronic devices, and electronic systems
US11049768B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2019 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Oct 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a microelectronic device comprises forming a stack structure comprising insulative structures and additional insulative structures vertically alternating with the insulative structures. Apertures are formed to extend to surfaces of the insulative structures at different depths than one another within the stack structure. Dielectric liner structures are formed within the apertures. Sacrificial structures are formed within portions of the apertures remaining unoccupied by the dielectric liner structures. Upper portions of the sacrificial structures are replaced with capping structures. Portions of the insulative structures and remaining portions of the sacrificial structures are replaced with electrically conductive material. Microelectronic devices and electronic systems are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.