Jiewei Chen
13Patents
1h-index
35Co-inventors
46Inventor score
Filing activity: Jul 12, 2016 → Aug 24, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11049768B2 | Methods of forming microelectronic devices, and related microelectronic devices, and electronic systems | Electricity | 3 | Active |
| US12322443B2 | Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US11600630B2 | Integrated assemblies and methods of forming integrated assemblies | Electricity | 0 | Active |
| US12272421B2 | Creating dynamic latches above a three-dimensional non-volatile memory array | Physics | 0 | Active |
| US9868114B2 | Preparation method of fluorine-doped lamellar black titanium dioxide nano material | Emerging Cross-Sectional Technologies | 0 | Active |
| US12167579B2 | Device temperature adjustment | Electricity | 0 | Active |
| US11688689B2 | Electronic devices including stair step structures, and related memory devices, systems, and methods | Electricity | 0 | Active |
| US12250812B2 | Integrated assemblies and methods of forming integrated assemblies | Electricity | 0 | Active |
| US12406728B2 | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems | Electricity | 0 | Active |
| US12406731B2 | Dynamic latches above a three-dimensional non-volatile memory array | Physics | 0 | Active |
| US11895834B2 | Methods used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US12406932B2 | Memory circuitry and method used in forming memory circuitry | Electricity | 0 | Active |
| US12295140B2 | Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.