Patent · US Active

Direct bonding process

US11056340B2 · kind B2 · utility

0Cited by

1References

14Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Frank Fournel · Meylan, FR
Frédéric Mazen · Grenoble, FR

Key dates

Filing date	Dec 3, 2018
Grant date	Jul 6, 2021
Priority date	—
Expiry date	Jul 12, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/2007
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for attaching a first substrate to a second substrate by direct bonding includes the successive steps of: a) providing the first and second substrates, each comprising a first surface and an opposite second surface, b) bonding the first substrate to the second substrate by direct bonding between the first surfaces of the first and second substrates, step b) being carried out under a first gaseous atmosphere having a first relative humidity level denoted by φ1, and c) applying a thermal annealing treatment to the bonded first and second substrates at a thermal annealing temperature of between 20° C. and 700° C., step c) being carried out under a second gaseous atmosphere having a second humidity level denoted by φ2, satisfying φ2≥φ1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.