Method of fabricating semiconductor device, vacuum processing apparatus and substrate processing apparatus
US11056349B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jan 17, 2020 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Jan 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.