Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor
US11056483B2 · kind B2 · utility
3Cited by
44References
22Claims
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Key dates
| Filing date | Jan 19, 2018 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Jan 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48472
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus and methods relating to heterolithic microwave integrated circuits HMICs are described. An HMIC can include different semiconductor devices formed from different semiconductor systems in different regions of a same substrate. An HMIC can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.