Structure of memory device having floating gate with protruding structure

US11056495B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Liang Yi · Singapore, SG
• Zhiguo Li · Hangzhou City, CN
• Chi Ren · Wenzhou, CN
• Qiuji Zhao · Singapore, SG
• Boon Keat Eddy Toh · Singapore, SG

Key dates

• Filing date: Jun 27, 2019
• Grant date: Jul 6, 2021
• Expiry date: Jun 27, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693

Abstract

A structure of memory device includes trench isolation lines in a substrate, extending along a first direction. An active region in the substrate is between adjacent two of the trench isolation lines. A dielectric layer is disposed on the active region of the substrate. A floating gate corresponding to a memory cell is disposed on the dielectric layer between adjacent two of the trench isolation lines. The floating gate has a first protruding structure at a sidewall extending along the first direction. A first insulating layer crosses over the floating gate and the trench isolation lines. A control gate line is disposed on the first insulating layer over the floating gate, extending along a second direction intersecting with the first direction. The control gate line has a second protruding structure correspondingly stacked over the first protruding structure of the floating gate.