Chi Ren
32Patents
4h-index
24Co-inventors
59Inventor score
Filing activity: Jul 15, 2012 → Feb 19, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD776875S1 | Razor head | General | 34 | Active |
| US8890230B2 | Semiconductor device | Electricity | 5 | Active |
| US11056495B2 | Structure of memory device having floating gate with protruding structure | Electricity | 5 | Active |
| US8921913B1 | Floating gate forming process | Electricity | 4 | Active |
| US9431256B2 | Semiconductor device and manufacturing method thereof | Electricity | 4 | Active |
| US9837425B2 | Semiconductor device with split gate flash memory cell structure and method of manufacturing the same | Electricity | 2 | Active |
| US10868197B1 | Structure of memory device and fabrication method thereof | Electricity | 2 | Active |
| US10784185B2 | Method for manufacturing semiconductor device with through silicon via structure | Electricity | 2 | Active |
| US10546801B2 | Semiconductor device with through silicon via structure and method for manufacturing the same | Electricity | 1 | Active |
| US9472562B1 | Semiconductor device and method for fabricating the same | Electricity | 1 | Active |
| US11901318B2 | Integrated circuit structure and fabrication method thereof | Electricity | 1 | Active |
| US12040369B2 | Semiconductor memory device and fabrication method thereof | Electricity | 1 | Active |
| US11765893B2 | Structure of memory device having floating gate with protruding structure | Electricity | 1 | Active |
| US11882699B2 | Silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FINFET and forming method thereof | Electricity | 0 | Active |
| US11690220B2 | Flash and fabricating method of the same | Electricity | 0 | Active |
| US12185532B2 | Structure of memory device having floating gate with protruding structure | Electricity | 0 | Active |
| US9117847B2 | Method for fabricating semiconductor device | Electricity | 0 | Active |
| US11955565B2 | Semiconductor memory device and fabrication method thereof | Electricity | 0 | Active |
| US10335968B2 | Razor head | Performing Operations; Transporting | 0 | Active |
| US11424258B2 | Flash and fabricating method of the same | Electricity | 0 | Active |
| US11856771B2 | Method of forming silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET | Electricity | 0 | Active |
| US11433562B2 | Razor head | Performing Operations; Transporting | 0 | Active |
| US10825522B2 | Method for fabricating low and high/medium voltage transistors on substrate | Electricity | 0 | Active |
| US11081427B2 | Semiconductor device with through silicon via structure | Electricity | 0 | Active |
| US12283557B2 | Integrated circuit structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.