Integrated assemblies having one or more modifying substances distributed within semiconductor material, and methods of forming integrated assemblies
US11056505B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2019 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Dec 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include a method of forming an integrated assembly. A stack of alternating first and second materials is formed over a conductive structure. The conductive structure includes a semiconductor-containing material over a metal-containing material. An opening is formed to extend through the stack and through the semiconductor-containing material, to expose the metal-containing material. The semiconductor-containing material is doped with carbon and/or with one or more metals. After the doping of the semiconductor-containing material, the second material of the stack is removed to form voids. Conductive material is formed within the voids. Insulative material is formed within the opening. Some embodiments include integrated assemblies having carbon distributed within at least a portion of a semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.