Method of forming a metal silicide transparent conductive electrode
US11056610B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2018 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Feb 23, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming a metal silicide nanowire network that includes multiple metal silicide nanowires fused together in an orderly arrangement on a substrate. The metal silicide nanowire network can be formed by printing a first set of multiple parallel silicon nanowires on the substrate and printing a second set of multiple parallel silicon nanowires over the first set of multiple parallel silicon nanowires such that said first set is perpendicular to said second set. A metal layer can be formed on the silicon nanowires. A silicidation anneal process is performed such that metal silicide nanowires are formed and fused together in an orderly arrangement, forming a grid network. After the silicidation anneal is performed, any unreacted silicon or metal can be selectively removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.