Manufacturing method of semiconductor device and semiconductor processing system
US11061333B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 26, 2018 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Aug 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.