Patent · US Active

Spin orbit torque memory devices and methods of fabrication

US11062752B2 · kind B2 · utility

1Cited by

0References

8Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Tofizur Rahman · Portland, US
James Pellegren · Portland, US
Angeline Smith · Hillsboro, US
Christopher J. Wiegand · Portland, US
Noriyuki Sato · Hillsboro, US
Tanay Gosavi · Portland, US
Sasikanth Manipatruni · Ithaca, US
Kaan Oguz · Beaverton, US
Kevin P. O'Brien · Cincinnati, US
Benjamin Buford · Hillsboro, US
Ian A. Young · Portland, US

Key dates

Filing date	Jan 11, 2019
Grant date	Jul 13, 2021
Priority date	—
Expiry date	Jan 11, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/80
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A perpendicular spin orbit torque memory device includes a first electrode having tungsten and at least one of nitrogen or oxygen and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first magnet, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.