Patent · US Active

Semiconductor devices including a metal silicide layer and methods for manufacturing thereof

US11063014B2 · kind B2 · utility

0Cited by

2References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Roesner · Villach, AT
Gudrun Stranzl · Eisenlohrsweg, AT

Key dates

Filing date	May 15, 2019
Grant date	Jul 13, 2021
Priority date	—
Expiry date	May 15, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/048
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a silicon layer, a metal silicide layer arranged directly on the silicon layer, and a solder layer arranged directly on the metal silicide layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.