Three-dimensional memory device containing plural work function word lines and methods of forming the same
US11063063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Dec 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a memory film and a vertical semiconductor channel. At least one of the electrically conductive layers contains a first conductive material portion having a respective inner sidewall that contacts a respective one of the memory films at a vertical interface, and a second conductive material portion that has a different composition from the first conductive material portion, and contacting the first electrically conductive material portion. The first conductive material portion has a lower work function than the second conductive material portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.