Self-limiting fin spike removal
US11063129B2 · kind B2 · utility
0Cited by
13References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Jul 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes laterally forming a spacer on a side of the semiconductor structure. The method further includes performing a thermal anneal on the semiconductor structure. The method further includes performing an etch to remove materials formed by the thermal anneal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.