Patent · US Active

Semiconductor device including silicon carbide body and method of manufacturing

US11063142B2 · kind B2 · utility

1Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jens Peter Konrath · Villach, AT
Wolfgang Bergner · Waldbüttelbrunn, DE
Christian Hecht · Buckenhof, DE
Hans-Joachim Schulze · Taufkirchen, DE
Andre Rainer Stegner · Unterhaching, DE

Key dates

Filing date	Dec 19, 2019
Grant date	Jul 13, 2021
Priority date	—
Expiry date	Jan 26, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/66
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a silicon carbide body that includes a first section and a second section. The first section is adjacent to the second section. A drift region is formed in the first section and the second section. A lattice defect region is in a portion of the drift region in the second section. A first density of lattice defects, which include interstitials and vacancies in the lattice defect region, is at least double a second density of lattice defects, which include interstitials and vacancies in a portion of the drift region outside the lattice defect region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.