Apparatus and method for the minimization of undercut during a UBM etch process
US11069583B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Nov 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.