Semiconductor storage device and method of manufacturing the same
US11069700B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Aug 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
Abstract
A semiconductor storage device includes a first stacked body, a second stacked body, a first division film, a second division film, and a plurality of discrete films. The a first stacked body includes first electrode layers stacked in a first direction. The second stacked body, above the first stacked body, includes second electrode layers stacked in the first direction. The second semiconductor layer is electrically connected to the first semiconductor layer. The first division film, extending in the first direction through the first stacked body, divides the first stacked body in a second direction crossing the first direction. The second division film, extending in the first direction through the second stacked body, divides the second stacked body in the second direction. The discrete films, extending in the first direction through the second stacked body, are disposed above the first division film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.