Method for depositing a silicon nitride film and film deposition apparatus
US11075074B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Aug 7, 2018 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Apr 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate with a silicon nitride film. In the method, a first silicon nitride film is deposited in the recessed pattern formed in the surface of the substrate. The first silicon nitride film has a V-shaped cross section decreasing its film thickness upward from a bottom portion of the recessed pattern. A second silicon nitride film conformal to a surface shape of the first silicon nitride film is deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.