Substrate processing apparatus
US11075096B2 · kind B2 · utility
1Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Nov 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67781
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method includes etching a substrate on which a silicon oxide film and a silicon nitride film are formed with a phosphoric acid processing liquid. In the etching, a silicon concentration in the phosphoric acid processing liquid is a first silicon concentration at which the silicon oxide film is etched, from a start time until a first time interval has elapsed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.