High power module package structures
US11075137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Jan 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dual-side cooling package includes a first semiconductor die and a second semiconductor die disposed between a first direct bonded metal (DBM) substrate and a second DBM substrate. A metal surface of the first DBM substrate defines a first outer surface of a package and a metal surface of the second DBM substrate defines a second outer surface of the package. The first semiconductor die is thermally coupled to the first DBM substrate. A first conductive spacer thermally couples the first semiconductor die to the second DBM substrate. The second semiconductor die is thermally coupled to a second conductive spacer. Further, one of the second semiconductor die and the second conductive spacer is thermally coupled to the first DMB substrate and the other of the second semiconductor die and the second conductive spacer is thermally coupled to the second DBM substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.