Large via buffer

US11075161B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Yann Mignot · Slingerlands, US
• Hsueh-Chung Chen · Cohoes, US
• Junli Wang · Slingerlands, US
• Chi-Chun Liu · Altamont, US
• Mary Claire Silvestre · Clifton Park, US

Key dates

• Filing date: Jun 13, 2019
• Grant date: Jul 27, 2021
• Expiry date: Jun 13, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76885
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An interconnect structure is provided. The interconnect structure includes a first metallization layer, an insulating layer and a second metallization layer. The first metallization layer includes, at an uppermost surface thereof, a first body formed of first dielectric material, first metallic elements and buffer elements formed of second dielectric material adjacent the first metallic elements. The insulating layer is disposed on the uppermost surface of the first metallization layer and defines apertures located at the first metallic elements and the corresponding buffer elements. The second metallization layer is disposed on the insulating layer and includes a second body formed of first dielectric material and second metallic elements located at the apertures and extending through the apertures to contact the corresponding first metallic elements and the corresponding buffer elements.