Correlated electron material (CEM) devices with contact region sidewall insulation
US11075339B2 · kind B2 · utility
0Cited by
20References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2018 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Dec 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, an insulative material may be formed on or over a sidewall portion of a conductive contact region. The insulative material may insulate the conductive contact region from resputtered CEM occurring during a physical etch of a CEM film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.