Patent · US Active

Method of processing a silicon carbide containing crystalline substrate, silicon carbide chip, and processing chamber

US11077525B2 · kind B2 · utility

0Cited by

5References

31Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Roesner · Villach, AT
Markus Menath · Regensburg, DE
Gudrun Stranzl · Eisenlohrsweg, AT

Key dates

Filing date	Apr 3, 2019
Grant date	Aug 3, 2021
Priority date	—
Expiry date	Oct 24, 2039

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB23K2103/56
WIPO fieldMachine tools
WIPO sectorMechanical engineering

Abstract

A method of processing silicon carbide containing crystalline substrate is provided. The method includes pyrolyzing a surface of the silicon carbide containing crystalline substrate to produce a silicon and carbon containing debris layer over the silicon carbide containing crystalline substrate, and removing the silicon and carbon containing debris layer, wherein the pyrolyzing and the removing is repeated at least once.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.