Microelectromechanical device, method for manufacturing a microelectromechanical device, and method for manufacturing a system on chip using a CMOS process

US11078072B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Thoralf Kautzsch · Dresden, DE
• Steffen Bieselt · Wehlen, DE
• Heiko Froehlich · Radebeul, DE
• Andre Roeth · Dresden, DE
• Maik Stegemann · Freital, DE
• Mirko Vogt · Dresden, DE

Key dates

• Filing date: Apr 29, 2020
• Grant date: Aug 3, 2021
• Expiry date: Apr 29, 2040

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2203/0714
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.