Method of producing silicon single crystal ingot and silicon single crystal ingot
US11078595B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2018 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Apr 30, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a method of producing a high resistance n-type silicon single crystal ingot with small tolerance margin on resistivity in the crystal growth direction, which is suitably used in a power device. In the method of producing a silicon single crystal ingot using Sb or As as an n-type dopant, while a silicon single crystal ingot is pulled up, the amount of the n-type dopant being evaporated from a silicon melt per unit solidification ratio is kept within a target evaporation amount range per unit solidification ratio by controlling one or more pulling condition values including at least one of the pressure in a chamber, the flow volume of Ar gas, and a gap between a guide portion and the silicon melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.