Reduction of crystal growth resulting from annealing a conductive material
US11081364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2019 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Feb 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems, apparatuses, and methods related to reduction of crystal growth resulting from annealing a conductive material are described. An example apparatus includes a conductive material selected to have an electrical resistance that is reduced as a result of annealing. A stabilizing material may be formed over a surface of the conductive material. The stabilizing material may be selected to have properties that include stabilization of the reduced electrical resistance of the conductive material and reduction of a degree of freedom of crystal growth relative to the surface resulting from recrystallization of the conductive material during the annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.