Method of manufacturing a semiconductor device comprising first and second field stop zone portions

US11081544B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Oana Julia Spulber · Neubiberg, DE
• Stephan Voss · Munich, DE

Key dates

• Filing date: Nov 28, 2018
• Grant date: Aug 3, 2021
• Expiry date: Jul 19, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of manufacturing a device in a semiconductor body includes forming a first field stop zone portion of a first conductivity type and a drift zone of the first conductivity type on the first field stop zone portion. An average doping concentration of the drift zone is smaller than 80% of that of the first field stop zone portion. The semiconductor body is processed at a first surface and thinned by removing material from a second surface. A second field stop zone portion of the first conductivity type is formed by implanting protons at one or more energies through the second surface. A deepest end-of-range peak of the protons is set in the first field stop zone portion at a vertical distance to a transition between the drift zone and first field stop zone portion in a range from 3 μm to 60 μm. The semiconductor body is annealed.