Method for producing nanostructures
US11085130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2016 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Feb 5, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing at least one type of nanostructures comprises the following steps: partially covering a surface of a single-crystal layer or multilayer structure with a discontinuous mask, forming discrete islets having at least one submicrometric lateral dimension and made of a material having an evaporation temperature above that of the layer or multilayer structure; and heating the layer or multilayer structure under vacuum to a so-called etching temperature, above the evaporation temperature of the layer or multilayer structure but below that of the mask, so as to cause evaporation of the layer or multilayer structure outside of the regions covered by the mask. Structures that may be produced by such a method are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.