Cryogenic atomic layer etch with noble gases
US11087989B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2020 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Jun 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching silicon at cryogenic temperatures is provided. The method includes forming an inert layer from condensation of a noble gas at cryogenic temperatures on exposed surfaces such as the sidewalls of a feature to passivate the sidewalls prior to the etching process. The method further includes flowing a fluorine-containing precursor gas into the chamber to form a fluorine-containing layer on the inert layer. The method further includes exposing the fluorine-containing layer and the inert layer to an energy source to form a passivation layer on the exposed portions of the substrate and exposing the substrate to ions to etch the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.