Sunil Srinivasan
24Patents
10h-index
41Co-inventors
71Inventor score
Filing activity: Aug 6, 2007 → Nov 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10555412B2 | Method of controlling ion energy distribution using a pulse generator with a current-return output stage | Electricity | 55 | Active |
| US10448494B1 | Method of controlling ion energy distribution using a pulse generator with a current-return output stage | Electricity | 53 | Active |
| US10791617B2 | Method of controlling ion energy distribution using a pulse generator with a current-return output stage | Electricity | 51 | Active |
| US10448495B1 | Method of controlling ion energy distribution using a pulse generator with a current-return output stage | Electricity | 45 | Active |
| USD797691S1 | Composite edge ring | General | 45 | Active |
| US9947517B1 | Adjustable extended electrode for edge uniformity control | Electricity | 36 | Active |
| US10103010B2 | Adjustable extended electrode for edge uniformity control | Electricity | 32 | Active |
| US10553404B2 | Adjustable extended electrode for edge uniformity control | Electricity | 13 | Active |
| US11284500B2 | Method of controlling ion energy distribution using a pulse generator | Electricity | 12 | Active |
| US10504702B2 | Adjustable extended electrode for edge uniformity control | Electricity | 12 | Active |
| US10991556B2 | Adjustable extended electrode for edge uniformity control | Electricity | 10 | Active |
| US8133817B2 | Shallow trench isolation etch process | Electricity | 6 | Active |
| US11393710B2 | Wafer edge ring lifting solution | Electricity | 5 | Active |
| US11087989B1 | Cryogenic atomic layer etch with noble gases | Electricity | 2 | Active |
| US11515166B2 | Cryogenic atomic layer etch with noble gases | Electricity | 1 | Active |
| US12094752B2 | Wafer edge ring lifting solution | Electricity | 1 | Active |
| US8747684B2 | Multi-film stack etching with polymer passivation of an overlying etched layer | Electricity | 0 | Active |
| US11521849B2 | In-situ deposition process | Electricity | 0 | Active |
| US12237149B2 | Reducing aspect ratio dependent etch with direct current bias pulsing | Electricity | 0 | Active |
| US11521838B2 | Integrated cleaning process for substrate etching | Electricity | 0 | Active |
| US12255055B2 | Integrated cleaning process for substrate etching | Electricity | 0 | Active |
| US11996294B2 | Cryogenic atomic layer etch with noble gases | Electricity | 0 | Active |
| US8187483B2 | Method to minimize CD etch bias | Physics | 0 | Active |
| US11049760B2 | Universal process kit | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.