Substrate processing method and substrate processing apparatus
US11087992B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Jan 31, 2020 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Jan 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.