Semiconductor device with partial EMI shielding and method of making the same
US11088082B2 · kind B2 · utility
5Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2018 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Aug 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a substrate. A lid is disposed over the substrate. An encapsulant is deposited over the substrate. A film mask is disposed over the encapsulant with the lid exposed from the film mask and encapsulant. A conductive layer is formed over the film mask, encapsulant, and lid. The film mask is removed after forming the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.