Patent · US Active

Apparatus with doped surfaces, and related methods with in situ doping

US11088147B2 · kind B2 · utility

0Cited by

10References

24Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Jaydip Guha · Boise, US
Saurabh Keshav · Boise, US
Srinivas Pulugurtha · Boise, US
Mohd Kamran Akhtar · Boise, US
James B. Franek · Boise, US
Alex J. Schrinsky · Boise, US

Key dates

Filing date	Jun 26, 2019
Grant date	Aug 10, 2021
Priority date	—
Expiry date	Jun 26, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10B12/488
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Apparatus, such as electronic devices and structures thereof, include at least one doped surface of a base (e.g., semiconductor) material. A dopant of the at least one doped surface is concentrated along the surface, defining a thickness, on or in the base material, not exceeding about one atomic layer. Methods for forming the doped surfaces involve gas-phase doping exposed surfaces of the base material in situ, within a same material-removal tool used to form at least one opening defined at least partially by the base material and into which the dopant is to be introduced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.