Alex J. Schrinsky
30Patents
3h-index
41Co-inventors
59Inventor score
Filing activity: Aug 23, 2004 → Jul 9, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9754946B1 | Methods of forming an elevationally extending conductor laterally between a pair of conductive lines | Electricity | 21 | Active |
| US7491641B2 | Method of forming a conductive line and a method of forming a conductive contact adjacent to and insulated from a conductive line | Electricity | 19 | Active |
| US9330934B2 | Methods of forming patterns on substrates | Electricity | 4 | Active |
| US11239242B2 | Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assemblies | Electricity | 3 | Active |
| US7262053B2 | Terraced film stack | Electricity | 3 | Expired |
| US9082714B2 | Use of etch process post wordline definition to improve data retention in a flash memory device | Electricity | 3 | Active |
| US7898019B2 | Semiconductor constructions having multiple patterned masking layers over NAND gate stacks | Electricity | 2 | Active |
| US7118966B2 | Methods of forming conductive lines | Electricity | 2 | Expired |
| US7476588B2 | Methods of forming NAND cell units with string gates of various widths | Electricity | 2 | Active |
| US8309424B2 | Methods of forming electrically insulative materials, methods of forming low k dielectric regions, and methods of forming semiconductor constructions | Electricity | 2 | Active |
| US8802525B2 | Methods of forming charge storage structures including etching diffused regions to form recesses | Electricity | 2 | Active |
| US7927964B2 | Methods of forming electrically insulative materials, methods of forming low k dielectric regions, and methods of forming semiconductor constructions | Electricity | 2 | Active |
| US9613864B2 | Low capacitance interconnect structures and associated systems and methods | Electricity | 2 | Active |
| US8367303B2 | Semiconductor device fabrication and dry develop process suitable for critical dimension tunability and profile control | Electricity | 1 | Active |
| US7595521B2 | Terraced film stack | Electricity | 1 | Active |
| US9082721B2 | Structures comprising masks comprising carbon | Electricity | 1 | Active |
| US10347643B1 | Methods of forming integrated assemblies having dielectric regions along conductive structures | Electricity | 1 | Active |
| US9911653B2 | Low capacitance interconnect structures and associated systems and methods | Electricity | 0 | Active |
| US10134741B2 | Methods of forming an elevationally extending conductor laterally between a pair of conductive lines | Electricity | 0 | Active |
| US8409457B2 | Methods of forming a photoresist-comprising pattern on a substrate | Physics | 0 | Active |
| US9087737B2 | Methods of forming charge storage structures including etching diffused regions to form recesses | Electricity | 0 | Active |
| US7468533B2 | Terraced film stack | Electricity | 0 | Active |
| US8696922B2 | Methods of plasma etching platinum-comprising materials, methods of processing semiconductor substrates in the fabrication of integrated circuitry, and methods of forming a plurality of memory cells | Electricity | 0 | Active |
| US11088147B2 | Apparatus with doped surfaces, and related methods with in situ doping | Electricity | 0 | Active |
| US9136331B2 | Semiconductor constructions | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.