High electron mobility transistor and method for fabricating the same
US11088271B2 · kind B2 · utility
5Cited by
3References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 22, 2019 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Nov 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.