Semiconductor structure having active regions with different dopant concentrations

US11094692B2 · kind B2 · utility

Assignee

• NANYA TECHNOLOGY CORPORATION · TW

Inventors

• Ching-Chia Huang · Taipei, TW
• Tseng-Fu Lu · New Taipei, TW

Key dates

• Filing date: Nov 13, 2019
• Grant date: Aug 17, 2021
• Expiry date: Nov 13, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A semiconductor structure includes a first semiconductor substrate, a second semiconductor substrate, a depletion layer, an isolation structure, a first gate structure, and a second gate structure. The first and second semiconductor substrates respectively have a first active region and a second active region overlapping the first active region. The depletion layer is disposed between the first active region and the second active region. The isolation structure surrounds the first and second active regions. The first gate structure is disposed in the second active region. The second gate structure is disposed in the second active region. The second active region has a portion between the first gate structure and the second gate structure.