Lateral heterojunction bipolar transistors with asymmetric junctions
US11094805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2020 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Jan 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A first portion of a first semiconductor layer defines an emitter, a first portion of a second semiconductor layer defines a collector, and a base includes respective second portions of the first and second semiconductor layers that are laterally positioned between the first portion of the first semiconductor layer and the first portion of the second semiconductor layer. The first portion of the first semiconductor layer has a first thickness, and the first portion of the second semiconductor layer has a second thickness that is greater than the first thickness. The first portion and the second portion of the first semiconductor layer adjoin at a first junction having the first thickness. The first portion and the second portion of the second semiconductor layer adjoin at a second junction having the second thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.