Semiconductor device and method for fabricating the same
US11094900B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Jan 8, 2019 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Jan 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer; performing a treatment process to rough a top surface of the first metal interconnection; and forming a carbon nanotube (CNT) junction on the first metal interconnection. Preferably, the treatment process further includes forming protrusions on the top surface of the first metal interconnection, in which the protrusions and the first metal interconnection comprise same material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.