Methods for gapfill in substrates
US11101128B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2020 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Mar 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.