Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
US11101219B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2019 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Jan 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a contact to a semiconductor device is provided that forms an alloy composed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) and a semiconductor material. The methods may include forming a nickel and platinum semiconductor alloy at a base of a via. A titanium layer having an angstrom scale thickness is deposited in the via in contact with the nickel platinum semiconductor alloy. An aluminum containing fill is deposited atop the titanium layer. A forming gas anneal including an oxygen containing atmosphere is applied to the structure to provide a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.