Semiconductor structure having word line disposed over portion of an oxide-free dielectric material in the non-active region
US11101273B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2020 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Feb 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
Abstract
A method of manufacturing a semiconductor structure includes: receiving a substrate having an active region and a non-active region adjacent to the active region; forming an etch stop layer over the non-active region of the substrate, in which the etch stop layer is oxide-free; forming an isolation over the etch stop layer; removing a portion of the active region and a portion of the isolation to form a first trench in the active region and a second trench over the etch stop layer, respectively, in which a thickness of the etch stop layer beneath the second trench is greater than a depth difference between the first trench and the second trench; forming a dielectric layer in the first trench; and filling a conductive material on the dielectric layer in the first trench and in the second trench. A semiconductor structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.