Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same
US11107516B1 · kind B1 · utility
20Cited by
11References
20Claims
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Key dates
| Filing date | Feb 24, 2020 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Feb 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory device includes a two-dimensional electron gas channel, a gate electrode, and a ferroelectric element located between the gate electrode and the two-dimensional electron gas channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.