Interconnect structure and manufacturing method for the same
US11107725B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2020 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Sep 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1031
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides an interconnect structure, including a first metal line, a conductive contact over the first metal line, including a first portion, a second portion over the first portion, wherein a bottom width of the second portion is greater than a top width of the first portion, and a third portion over the second portion, wherein a bottom width of the third portion is greater than a top width of the second portion, a sacrificial bilayer, including a first sacrificial layer, wherein a first portion of the first sacrificial layer is under a coverage of a vertical projection area of the first portion of the conductive contact, and a second sacrificial layer over the first sacrificial layer, and a dielectric layer over a top surface of the second sacrificial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.