Methods of forming dislocation enhanced strain in NMOS structures

US11107920B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Michael Jackson · Belfast, GB
• Anand S. Murthy · Beaverton, US
• Glenn A. Glass · Portland, US
• Saurabh Morarka · Hillsboro, US
• Chandra S. Mohapatra · Hillsboro, US

Key dates

• Filing date: Jul 11, 2019
• Grant date: Aug 31, 2021
• Expiry date: Jul 11, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.