Saurabh Morarka
10Patents
0h-index
26Co-inventors
40Inventor score
Filing activity: Sep 26, 2013 → Sep 9, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11961836B2 | FinFET varactor quality factor improvement | Electricity | 0 | Active |
| US11482618B2 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Electricity | 0 | Active |
| US11417781B2 | Gate-all-around integrated circuit structures including varactors | Electricity | 0 | Active |
| US11610995B2 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Electricity | 0 | Active |
| US12382721B2 | Integrated circuit structures having cut metal gates with dielectric spacer fill | Electricity | 0 | Active |
| US11515424B2 | Field-effect transistors with asymmetric gate stacks | Electricity | 0 | Active |
| US11107920B2 | Methods of forming dislocation enhanced strain in NMOS structures | Electricity | 0 | Active |
| US11411110B2 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Electricity | 0 | Active |
| US11869987B2 | Gate-all-around integrated circuit structures including varactors | Electricity | 0 | Active |
| US10396201B2 | Methods of forming dislocation enhanced strain in NMOS structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.