Michael Jackson
20Patents
6h-index
14Co-inventors
66Inventor score
Filing activity: Dec 26, 1979 → Sep 9, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5749433A | Massline loudspeaker enclosure | Electricity | 34 | Expired |
| US4281738A | Spherical loudspeaker enclosure | Electricity | 19 | Expired |
| US8896066B2 | Tin doped III-V material contacts | Electricity | 10 | Active |
| US7823331B2 | French door seal having a magnetic pair | Mechanical Engineering; Lighting; Heating | 8 | Active |
| US5255452A | Method and means for creating anti-gravity illusion | Performing Operations; Transporting | 7 | Expired |
| US5722129A | Seat belt buckle | Emerging Cross-Sectional Technologies | 6 | Expired |
| US8495946B2 | Camouflage utilizing nano-optical arrays embedded in carbon matrix | Performing Operations; Transporting | 6 | Active |
| US9633835B2 | Transistor fabrication technique including sacrificial protective layer for source/drain at contact location | Electricity | 5 | Active |
| US6292988A | Seat belt buckle | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6014796A | Seat belt buckle | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5870810A | Seat belt buckle | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5718020A | Seat belt buckle | Emerging Cross-Sectional Technologies | 1 | Expired |
| US5791027A | Seat belt buckle | Emerging Cross-Sectional Technologies | 1 | Expired |
| US9966440B2 | Tin doped III-V material contacts | Electricity | 1 | Active |
| US11107920B2 | Methods of forming dislocation enhanced strain in NMOS structures | Electricity | 0 | Active |
| US10396201B2 | Methods of forming dislocation enhanced strain in NMOS structures | Electricity | 0 | Active |
| US11411110B2 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Electricity | 0 | Active |
| US11411095B2 | Epitaxial source or drain structures for advanced integrated circuit structure fabrication | Electricity | 0 | Active |
| US11482618B2 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Electricity | 0 | Active |
| US11610995B2 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.