Methods of forming variable-depth device structures
US11112694B2 · kind B2 · utility
4Cited by
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27Claims
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Key dates
| Filing date | May 13, 2020 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | May 13, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2027/0174
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a device structure is disclosed. The method of forming the device structure includes forming a variable-depth structure in a device material layer using cyclic-etch process techniques. A plurality of device structures is formed in the variable-depth structure to define vertical or slanted device structures therein. The variable-depth structure and the vertical or slanted device structures are formed using an etch process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.