Physical vapor deposition apparatus
US11114288B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2019 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Apr 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3441
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for physical vapor deposition are provided. The apparatus, for example, includes A PVD apparatus that includes a chamber including a chamber wall; a magnetron including a plurality of magnets configured to produce a magnetic field within the chamber; a pedestal configured to support a substrate; and a target assembly comprising a target made of gold and supported on the chamber wall via a backing plate coupled to a back surface of the target so that a front surface of the target faces the substrate, wherein a distance between a back surface formed in a recess of the backing plate and a bottom surface of the plurality of magnets is about 3.95 mm to about 4.45 mm, and wherein a distance between the front surface of the target and a front surface of the substrate is about 60.25 mm to about 60.75 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.