Patent · US Active

Techniques for reducing tip to tip shorting and critical dimension variation during nanoscale patterning

US11114299B2 · kind B2 · utility

0Cited by

11References

19Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Qintao Zhang · Mount Kisco, US
Kyu-Ha Shim · Andover, US
Rajesh Prasad · Lexington, US

Key dates

Filing date	Sep 13, 2019
Grant date	Sep 7, 2021
Priority date	—
Expiry date	Oct 10, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/024
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming surface features in a hardmask layer, including etching a first surface feature into the hardmask layer, the first surface feature having a first critical dimension, performing an ion implantation process on the first surface feature to make the first surface feature resistant to subsequent etching processes, etching a second surface feature into the hardmask layer adjacent the first surface feature, wherein the first critical dimension is preserved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.